Buried GaAs/GaAlAs double heterostructure lasers have been realized by combining a double heterostructure grown by metalorganic chemical vapor deposition, p‐dopant implantation, stripes chemical etching, and liquid‐phase epitaxy (LPE) regrowth of n− GaAlAs. Although the p‐implanted top of the stripes were thermally annealed during the LPE burying, no regrowth occurred on them. Buried lasers were thus directly obtained while p‐ohmic contact properties were good. The causes of such a phenomenon have been studied by transmission electron microscope and electron diffraction techniques. Typical threshold currents of 12 mA for a 270‐μm cavity length were obtained. This technology offers the potential of low ohmic contact resistivity.

Topics
Ohmic contacts, Epitaxy, Etching, Chemical vapor deposition, Optical resonators, Diffraction, Lasers, Semiconductors
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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