We report photoluminescence in HgTe‐CdTe superlattices that originates in the CdTe layers. We see a near‐band‐gap line at 1.493 eV, which demonstrates that strain and Hg‐Cd substitutional diffusion are small in the CdTe layers. In addition, a deep‐level line at 0.775 eV, possibly due to recombination along dislocation lines, is observed.
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© 1987 American Institute of Physics.
1987
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