The feasibility of studying dynamical changes in metal/silicon and ion‐implanted silicon thin films by cross‐sectional transmission electron microscopy with intermittent annealings in N2 ambient up to 900 °C is demonstrated. Interactions of nickel thin films with oxidation‐induced stacking faults and fluorine bubbles, the evolution of microstructural defects and solid‐phase epitaxial growth in BF+2 ‐implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain information otherwise unattainable.
REFERENCES
1.
K. N. Tu and J. W. Mayer, in Thin Films—Interdiffusion and Reactions, edited by J. M. Poate, K. N. Tu, and J. W. Mayer (Wiley, New York, 1978), p. 359.
2.
G. Thomas and M. J. Goringe, Transmission Electron Microscopy of Materials (Wiley‐Interscience, New York, 1979).
3.
R. B. Marcus and T. T. Sheng, Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley‐Interscience, New York, 1983).
4.
E. P. Butler and K. F. Hale, Dynamical Experiments in the Electron Microscope (North‐Holland, Amsterdam, 1981).
5.
D. A.
Smith
, F. A.
Psaras
, I. J.
Fisher
, and K. N.
Tu
, Mater. Res. Soc. Symp. Proc.
37
, 407
(1985
).6.
7.
8.
9.
10.
11.
K. N.
Tu
, E. I.
Alessandrini
, W. K.
Chu
, H.
Krautle
, and J. W.
Mayer
, Jpn. J. Appl. Phys.
2
, Suppl. 2‐1
, 669
(1974
).
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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