We have used Raman backscattering to characterize GaAs/AlAs superlattices grown by metalorganic chemical vapor deposition technique. Diffusion across the GaAs and AlAs interfaces can be observed by studying the optic and folded acoustic phonon scattering. Observation of light scattering from folded acoustic phonons in metalorganic chemical vapor deposition grown samples suggests the ability of the technique in monitoring the layer‐to‐layer uniformity of superlattices. Using a simple, analytic model we estimate the interfacial width to be 20 Å.
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© 1987 American Institute of Physics.
1987
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