We present the results of a two‐dimensional simulation of the amplification of an ambipolar current flow in a four‐terminal crystalline silicon device by charge induced into this flow from an insulated gate electrode. We show that although a bipolar current flow in a crystalline device can indeed be modulated by a gate field, the magnitude of this modulation is less than in amorphous silicon double‐injection field‐effect transistors. Our proposed structure also has an interesting feature in that the gate field redistributes the current flow between its terminals.
REFERENCES
1.
M.
Hack
, M.
Shur
, and W.
Czubatyj
, Appl. Phys. Lett.
48
, 1386
(1986
).2.
M. Hack, M. Shur, and W. Czubatyj, Proceedings of the Material ResearchSociety Symposium, Vol. 70, Palo Alto, edited by D. Adler, Y. Hamakawa, and A. Madan, (Materials Research Society, Pittsburgh, 1986), p. 643.
3.
4.
M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970), p. 211.
5.
B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, in International Electron Devices Meeting, Washington, DC (IEEE, New York, 1982), p. 264;
A. M. Goodman, J. P. Russell, L. A. Goodman, C. J. Nuese, and J. M. Neilson, in International Electron Devices Meeting, Washington, DC (IEEE, New York, 1983), p. 79.
6.
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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