The transition from a high‐resistance to a low‐resistance state has been observed in a silicon bicrystal. This phenomenon is attributed to the trapping of minority carriers at the grain‐boundary interface states. In the low‐resistance state, the dc resistance of different samples falls into a narrow range of values, and exhibits, in addition, a positive temperature coefficient.
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See, for example, S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 1.
4.
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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