The transition from a high‐resistance to a low‐resistance state has been observed in a silicon bicrystal. This phenomenon is attributed to the trapping of minority carriers at the grain‐boundary interface states. In the low‐resistance state, the dc resistance of different samples falls into a narrow range of values, and exhibits, in addition, a positive temperature coefficient.

Topics
Temperature coefficient, Crystallographic defects, Resistive switching, Chemical elements
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© 1987 American Institute of Physics.
1987
American Institute of Physics
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