Compressive deformation of undoped and In‐doped GaAs single crystals has been carried out in [001] and [123] orientations in the temperature range 700–1100 °C. Indium additions, at levels of 1–2×1020 atoms cm−3, result in critical resolved shear stress (CRSS) values that are about twice as large as the undoped crystals in the temperature range of 700–1100 °C. The CRSS was weakly dependent on temperature in the temperature range investigated as expected for a model of athermal solid solution hardening. The CRSS value of 3.3 MPa for the In‐doped crystal is sufficient to eliminate profuse dislocation formation in a 75‐mm‐diam crystal on the basis of current theories for the magnitude of the thermal stress experienced during growth. The results also suggest that the process of dislocation climb is slowed appreciably by In doping.
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15 November 1987
Research Article|
November 15 1987
Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C
S. Guruswamy;
S. Guruswamy
Department of Ceramic Engineering, The Ohio State University, Columbus, Ohio 43210
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R. S. Rai;
R. S. Rai
Department of Ceramic Engineering, The Ohio State University, Columbus, Ohio 43210
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K. T. Faber;
K. T. Faber
Department of Ceramic Engineering, The Ohio State University, Columbus, Ohio 43210
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J. P. Hirth
J. P. Hirth
Department of Metallurgical Engineering, The Ohio State University, Columbus, Ohio 43210
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J. Appl. Phys. 62, 4130–4134 (1987)
Article history
Received:
May 26 1987
Accepted:
August 11 1987
Citation
S. Guruswamy, R. S. Rai, K. T. Faber, J. P. Hirth; Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C. J. Appl. Phys. 15 November 1987; 62 (10): 4130–4134. https://doi.org/10.1063/1.339129
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