This paper describes the growth of multilayers of HgTe‐CdTe on cadmium telluride substrates using metalorganic chemical vapor deposition. These structures were grown using a novel precracking technique that allows growth of the multilayers at low temperatures from the source gases dimethylmercury, dimethylcadmium, and diethyltelluride. Cross sections of several samples were examined using scanning electron microscopy and transmission electron microscopy; these samples were found to have sharp interfaces. The structures for this study are the most sophisticated multilayers of HgTe‐CdTe ever grown by metalorganic chemical vapor deposition.
REFERENCES
1.
2.
T.
Nguyen Duy
, J.
Meslage
, and G.
Pichard
, J. Cryst. Growth
72
, 490
(1985
).3.
4.
D. L.
Smith
, T. C.
McGill
, and J. N.
Sehulman
, Appl. Phys. Lett.
43
, 180
(1983
).5.
C. E.
Jones
, T. N.
Casselman
, J. P.
Faurie
, S.
Perkowitz
, and J. N.
Schulman
, Appl. Phys. Lett.
47
, 140
(1985
).6.
K. A.
Harris
, S.
Hwang
, D. K.
Blanks
, J. W.
Cook
, Jr., J. F.
Sehetzina
, N.
Otsuka
, J. P.
Baukus
, and A. T.
Hunter
, Appl. Phys. Lett.
48
, 396
(1986
).7.
S. J. C.
Irvine
, J. E.
Mullin
, and I.
Tunnicliffe
, J. Cryst. Growth
68
, 188
(1984
).8.
9.
C.‐H.
Wang
, P.‐Y.
Lu
, and L. M.
Williams
, Appl. Phys. Lett.
48
, 1085
(1986
).10.
P.‐Y.
Lu
, C.‐H.
Wang
, L. M.
Williams
, S. N. G.
Chu
, and C. M.
Stiles
, Appl. Phys. Lett.
49
, 1372
(1986
).11.
S. N. G.
Chu
and T. T.
Sheng
, J. Electrochem. Soc.
131
, 2663
(1984
).12.
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© 1987 American Institute of Physics.
1987
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