Excimer laser irradiation was used to induce rapid formation of nitride and oxide layers on beryllium samples immersed in liquid nitrogen and water, respectively. The elemental composition of the irradiated surfaces was determined by means of Rutherford backscattering spectrometry. Compound formation of Be3N2 and BeO was confirmed by x‐ray diffraction. The results show that extensive reaction occurred only if the laser energy was sufficient to melt the beryllium surface. The amount of incorporated nitrogen or oxygen atoms was initially proportional to the laser energy density and to the number of laser shots. Saturation occurred when a near stoichiometric layer of Be3N2 or BeO was formed at the surface. The rate of compound formation was extremely high, on the order of 10–100 nm per shot.
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1 July 1987
Letter|
July 01 1987
Rapid laser‐induced growth of nitride and oxide layers at a beryllium/liquid interface Available to Purchase
D. Dijkkamp;
D. Dijkkamp
Bell Communications Research, Red Bank, New Jersey 07701
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X. D. Wu;
X. D. Wu
Bell Communications Research, Red Bank, New Jersey 07701
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Siu‐Wai Chan;
Siu‐Wai Chan
Bell Communications Research, Red Bank, New Jersey 07701
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T. Venkatesan
T. Venkatesan
Bell Communications Research, Red Bank, New Jersey 07701
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D. Dijkkamp
Bell Communications Research, Red Bank, New Jersey 07701
X. D. Wu
Bell Communications Research, Red Bank, New Jersey 07701
Siu‐Wai Chan
Bell Communications Research, Red Bank, New Jersey 07701
T. Venkatesan
Bell Communications Research, Red Bank, New Jersey 07701
J. Appl. Phys. 62, 293–295 (1987)
Article history
Received:
December 19 1986
Accepted:
March 23 1987
Citation
D. Dijkkamp, X. D. Wu, Siu‐Wai Chan, T. Venkatesan; Rapid laser‐induced growth of nitride and oxide layers at a beryllium/liquid interface. J. Appl. Phys. 1 July 1987; 62 (1): 293–295. https://doi.org/10.1063/1.339143
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