Growth characteristics of a laser metalorganic vapor‐phase epitaxy (laser MOVPE) and the electrical and optical properties of the epitaxial layer grown by the technique are examined. The growth rate under laser MOVPE decreases with increasing substrate temperature in contrast with conventional MOVPE. The growth rate also depends on the type of the substrate, total gas flow rate and the incident laser power. The mechanism of laser MOVPE seems not to be a photothermal effect but a surface photochemical effect. The intensity of the photoluminescence at room temperature for the epitaxial layer grown by the laser MOVPE is found to be stroger than that of the epitaxial layer grown without the laser irradiation under the same growth condition. The carrier concentration is also found to be modified by the laser irradiation. It is emphasized that the laser MOVPE is very useful as a new crystal growth technology.
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1 November 1986
Research Article|
November 01 1986
Characteristics of laser metalorganic vapor‐phase epitaxy in GaAs
Yoshinobu Aoyagi;
Yoshinobu Aoyagi
Riken, The Institute of Physical and Chemical Research, Wako‐shi, Saitama, 351‐01, Japan
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Manabu Kanazawa;
Manabu Kanazawa
Riken, The Institute of Physical and Chemical Research, Wako‐shi, Saitama, 351‐01, Japan
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Atsutoshi Doi;
Atsutoshi Doi
Riken, The Institute of Physical and Chemical Research, Wako‐shi, Saitama, 351‐01, Japan
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Sohachi Iwai;
Sohachi Iwai
Riken, The Institute of Physical and Chemical Research, Wako‐shi, Saitama, 351‐01, Japan
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Susumu Namba
Susumu Namba
Riken, The Institute of Physical and Chemical Research, Wako‐shi, Saitama, 351‐01, Japan
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J. Appl. Phys. 60, 3131–3135 (1986)
Article history
Received:
February 14 1986
Accepted:
July 18 1986
Citation
Yoshinobu Aoyagi, Manabu Kanazawa, Atsutoshi Doi, Sohachi Iwai, Susumu Namba; Characteristics of laser metalorganic vapor‐phase epitaxy in GaAs. J. Appl. Phys. 1 November 1986; 60 (9): 3131–3135. https://doi.org/10.1063/1.337725
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