Room‐temperature optical absorption data in the 1.5–2.5‐eV range are reported for indium nitride thin films prepared by reactive radio‐frequency sputtering. The fundamental absorption edge in high‐purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band‐structure calculations. A significant Moss‐Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.
REFERENCES
1.
T. L. Tansley and C. P. Foley, in Semi‐Insulating III‐V Materials, edited by D. L. Look and J. S. Blakemore (Shiva, London, 1984), p. 497.
2.
3.
B. R.
Natarajan
, A. H.
Eltoukhy
, J. E.
Greene
, and T. L.
Barr
, Thin Solid Films
69
, 201
(1980
).4.
5.
V. A.
Tyagai
, A. M.
Evstigneev
, A. N.
Krasiko
, A. F.
Andreeva
, and V. Ya.
Malakhov
, Sov. Phys. Semicond.
11
, 1257
(1977
).6.
C. P. Foley and T. L. Tansley, Phys. Rev. B (in press).
7.
8.
S.
Bloom
, G.
Harbeke
, M.
Meier
, and I. B.
Ortenburger
, Phys. Status Solidi B
66
, 161
(1974
).9.
10.
11.
12.
B. R.
Natarajan
, A. H.
Eltoukhy
, J. E.
Greene
, and T. L.
Barr
, Thin Solid Films
69
, 217
(1980
).13.
H. Kressel and J. K. Butler, in Semiconductor Lasers and Heterojunction LEDs (Academic, New York, 1977), pp. 18–ndash;26.
14.
15.
16.
17.
18.
19.
20.
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© 1986 American Institute of Physics.
1986
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