We compute the dynamic resistivity ρ≡ρ1+iρ2 for a model of heavily n‐doped semiconductors with special regard to transparent and heat‐reflecting In2O3:Sn films. The Sn impurities are ionized and the ensuing electrons occupy part of the In2O3 conduction band as a free‐electron gas (with plasma energy ℏωp). We use pseudopotential arguments to show that the Sn ions act as Coulomb scatterers up to the largest electron densities of practical interest. By representing screening in the electron gas with different models, it was found that exchange and correlation could decrease ρ1 by ≲20% below ℏωp and alter the exponent s in the relation ρ1∝ωs, applying at ℏω>ℏωp, from −3/2 to ∼ −2.

Topics
Free electron model, Optical properties, Thin films, Electron gas, Lattice scattering
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1986
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