Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
REFERENCES
1.
2.
C. Y. Ting, Technical Digest of the International Electron Devices Meeting, San Francisco, CA, Dec. 9–12, 1984.
3.
4.
S.
Saitoh
, H.
Ishiwara
, T.
Asano
, and S.
Furukawa
, Jpn. J. Appl. Phys.
221
, 1118
(1981
).5.
S.
Saitoh
, H.
Ishiwara
, and S.
Furukawa
, Appl. Phys. Lett.
37
, 203
(1980
).6.
S. K. Ghandhi, VLSI Fabrication Principles (Wiley, New York, 1983).
7.
8.
9.
10.
F. Y.
Shiau
, H. C.
Cheng
, and L. J.
Chen
, Appl. Phys. Lett.
45
, 524
(1984
).11.
C. J.
Chien
, H. C.
Cheng
, and L. J.
Chen
, J. Appl. Phys.
57
, 1887
(1985
).12.
H. C.
Cheng
, T. R.
Yew
, and L. J.
Chen
, J. Appl. Phys.
57
, 5246
(1985
).13.
M. S.
Fung
, H. C.
Cheng
, and L. J.
Chen
, Appl. Phys. Lett.
47
, 1312
(1985
).14.
M. J. Stowell, in Epitaxial Growth, edited by J. W. Matthews (Academic, New York, 1975), p. 437.
15.
16.
F. M.
d’Heurle
, C. S.
Petersson
, and M. Y.
Tsai
, J. Appl. Phys.
51
, 5976
(1980
).17.
M. A. Nicolet and S. S. Lau, in Materials and Process Characterization, edited by N. G. Einspruch and G. B. Larrabee (Academic, New York, 1983), p. 329.
18.
A.
Zur
, T. C.
McGill
, and M. A.
Nicolet
, J. Appl. Phys.
57
, 600
(1985
).19.
A. Zur, T. C. McGill, and M. A. Nicolet, AIP Document No. PAPS JAPIA‐57‐600‐76.
20.
J. W. Matthews, in Epitaxial Growth, edited by J. W. Matthews (Academic, New York, 1975), p. 559.
21.
22.
23.
24.
This content is only available via PDF.
© 1986 American Institute of Physics.
1986
American Institute of Physics
You do not currently have access to this content.
