Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.

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