Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.

Topics
Electroluminescence, Oxides, Chemical compounds
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© 1985 American Institute of Physics.
1985
American Institute of Physics
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