An exact solution is given in one dimension for the electron distribution as limited by optical phonon scattering. The solution is valid for an arbitrary shape of potential energy, and current flow. Numerical results are presented for both constant field devices, and for the nonconstant fields of a typical metal‐oxide‐semiconductor‐field‐effect transistor (MOSFET) channel in silicon.
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© 1985 American Institute of Physics.
1985
American Institute of Physics
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