Infrared (IR) absorption and Raman spectra are measured for glow‐discharge‐produced, wide‐optical‐gap binary Si:H alloys containing a number of polysilane (SiH2)n groups (polysilane alloys). The highly resolved IR stretching band revealed double peaks, at 2100 and 2122 cm1, which correspond to an exterior SiH2 and an interior SiH2, respectively, in a 3/4 Si(SiH2)nSi 3/4 group. This result provides evidence for the existence of (SiH2)n (n≥3) groups. Nonlinearity of the (SiH2)n wagging absorption strength with the number of SiH2 units in the alloy is observed in the IR spectra. This is related to a change in the polymerization degree of a (SiH2)n chain. Raman scattering intensity in the 50–400 cm1 range is lower than that for conventional hydrogenated amorphous silicon alloys, suggesting a reduction in the number of Si loops arising from (SiH2)n chain formations. The change in the polymerization degree as a function of substrate temperature during deposition and the annealing temperature are also discussed.

1.
S. Furukawa and N. Matsumoto, Proceedings of the 15th Conference on Solid State Devices and Materials, Tokyo, Extended Abstract C‐3‐8LN (The Japan Society of Applied Physics, Tokyo, 1983).
2.
S.
Furukawa
and
N.
Matsumoto
,
Solid State Commun.
48
,
539
(
1983
).
3.
S.
Furukawa
and
N.
Matsumoto
,
Solid State Commun.
51
,
833
(
1984
).
4.
S.
Furukawa
and
N.
Matsumoto
,
Phys. Rev. B
31
,
2114
(
1985
).
5.
N.
Matsumoto
,
S.
Furukawa
, and
K.
Takeda
,
Solid State Commun.
53
,
881
(
1985
).
6.
D. J. Wolford, B. A. Scott, J. A. Reimer, and J. A. Bradley, Proceedings of the 16th International Conference on the Physics of Semiconductors, (Montpellier, 1982);
Physica
117 & 118
,
920
(
1983
).
7.
D. J.
Wolford
,
J. A.
Reimer
, and
B. A.
Scott
,
Appl. Phys. Lett.
42
,
369
(
1983
).
8.
M. H.
Brodsky
,
M.
Cardona
, and
J. J.
Cuomo
,
Phys. Rev. B
16
,
3556
(
1977
).
9.
G.
Lucovsky
,
R. J.
Nemanich
, and
J. C.
Knights
,
Phys. Rev. B
19
,
2064
(
1979
).
10.
W. B.
Pollard
and
G.
Lucovsky
,
Phys. Rev. B
26
,
3172
(
1982
).
11.
G.
Lucovsky
,
Springer Ser. Solid State Sci.
22
,
87
(
1981
).
12.
G.
Lucovsky
,
Solid State Commun.
29
,
571
(
1979
).
13.
C. J.
Fang
,
L.
Ley
,
H. R.
Shanks
,
K. J.
Gruntz
, and
M.
Cardona
,
Phys. Rev. B
22
,
6140
(
1980
).
14.
P.
Vora
,
S. A.
Solin
, and
P.
John
,
Phys. Rev. B
29
,
3423
(
1984
).
15.
F.
Yndurain
and
P. N.
Sen
,
Phys. Rev. B
14
,
531
(
1976
).
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