Raman spectroscopy has been used to study the lattice‐mismatch strains in GaAs‐InxAl1−xAs strained‐layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 Å and In content x of 0.11, 0.20, and 0.35. The strain‐induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice‐mismatch strain given by the elastic theory.
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© 1985 American Institute of Physics.
1985
American Institute of Physics
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