Catastrophically degraded InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x‐ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of 〈110〉 dark‐line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of 〈110〉 dark‐line defects from the defects inside the stripe region. These 〈110〉 dark‐line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double‐heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double‐heterostructure lasers are rather similar to those in GaAlAs/GaAs double‐heterostructure lasers concerning the catastrophic degradation.
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1 December 1985
Research Article|
December 01 1985
Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy Available to Purchase
Osamu Ueda;
Osamu Ueda
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Kiyohide Wakao;
Kiyohide Wakao
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Satoshi Komiya;
Satoshi Komiya
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Akio Yamaguchi;
Akio Yamaguchi
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Shoji Isozumi;
Shoji Isozumi
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Itsuo Umebu
Itsuo Umebu
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
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Osamu Ueda
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
Kiyohide Wakao
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
Satoshi Komiya
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
Akio Yamaguchi
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
Shoji Isozumi
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
Itsuo Umebu
Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan
J. Appl. Phys. 58, 3996–4002 (1985)
Article history
Received:
July 24 1985
Accepted:
August 12 1985
Citation
Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, Itsuo Umebu; Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy. J. Appl. Phys. 1 December 1985; 58 (11): 3996–4002. https://doi.org/10.1063/1.335576
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