First‐order Raman spectra from selected volume elements of diamonds used as anvils in a gasketed high‐pressure cell have been measured under applied load. The observed Raman profiles are interpreted on the basis of known isotropic and uniaxial stress effects in diamond‐type materials. It is demonstrated that Raman spectroscopy provides in situ experimental information on the stress distribution within the anvils. Up to at least 300 kbar, the prominent high‐frequency edge of the Raman profile measured at the center of the diamond tip face exhibits a linear dependence on pressure within the sample volume. The application of diamond anvil Raman scattering for pressure determination is discussed.
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Research Article| April 15 1985
A Raman study of diamond anvils under stress
M. Hanfland, K. Syassen; A Raman study of diamond anvils under stress. J. Appl. Phys. 15 April 1985; 57 (8): 2752–2756. https://doi.org/10.1063/1.335417
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