Rapidly degraded InGaAsP/InGaP double‐heterostructure lasers grown on (001)‐oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 〈100〉‐dark‐line defects and 〈110〉‐dark‐line defects are observed in the degraded region. The 〈100〉‐dark‐line defects correspond to interstitial type dislocation dipoles caused by recombination enhanced dislocation climb. Their origins are threading dislocations, V‐shaped dislocations, and dislocation networks. The 〈110〉‐dark‐line defects correspond to faulted dipoles extended from small faulted loops in the active layer, edge dipoles extended from threading dislocations, and glide dislocations. The velocities of the 〈100〉‐dark‐line defects are estimated by the operating time and the length of the dark lines, and are quite similar to those in rapidly degraded GaAlAs double‐heterostructure lasers.
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