Electrical transport measurements between 300 and 1.5 K were made on two Pb0.75Sn0.25Te films doped approximately 0.5 at. % indium. The Hall mobility, Hall coefficient, and resistivity display an unusual temperature dependence relative to those of undoped PbSnTe which suggest a phase transition at approximately 18 K. These samples also exhibit high photosensitivity below 21 K where slowly relaxing and persistent photoconductivity was observed. Time constants for the photoconductive relaxation were found for temperatures between 8 and 19 K. The application of a magnetic field during sample cooldown had a large effect on the zero‐field resistivity of the sample at 4.2 K.
REFERENCES
1.
K. Murase, S. Takaoka, T. Itoga, and S. Ishida, “Application of High Magnetic Fields in Semiconductor Physics,” Proceedings, Grenoble, France 1982, Lecture Notes In Physics 177 (Springer, New York, 1983), p. 374.
2.
C. M.
Penchina
, A.
Klein
, and K.
Weiser
, Proceedings of the 15th International Conference on Semiconductors, Kyoto 1980, J. Phys. Soc. Jpn.
49
, Suppl. A
, 783
(1980
).3.
B. M.
Vul
, I. D.
Voronova
, G. A.
Kalyuzhnaya
, T. S.
Mamedov
, and T. Sh.
Ragomova
, JETP Lett.
29
, 18
(1979
).4.
B. A.
Akimov
, N. B.
Brandt
, B. S.
Kerner
, V. N.
Nikiforov
, and S. M.
Chudinov
, Solid State Commun.
43
, 31
(1982
).5.
K. H.
Herrmann
, G. A.
Kalyuzhnaya
, K. P.
Mölmann
, and M.
Wendt
, Phys. Status Solidi A
71
, K21
(1982
).6.
7.
B. A.
Akimov
, A. I.
Elizarov
, K. R.
Kurbanov
, L. I.
Ryabova
, V. V.
Sokovishin
, and A. V.
Fedorov
, Sov. Phys. Semicond.
17
, 632
(1983
).8.
K. P.
Möllmann
, K. H.
Herrmann
, and R.
Enderlein
, Proceedings of the 16th International Conference on the Physics of Semiconductors, Physica
117B/118B
, 582
(1983
).9.
J. L. Davis, B. B. Houston, and A. Martinez, Thin Solid Films (to be published).
10.
J. R. Burke, J. D. Jensen, and B. Houston, in The Physics of Semimetals and Narrow Gap Semiconductors, edited by D. L. Carter and R. T. Bate (Pergamon, New York, 1971), p. 393.
11.
Yu. I. Ravich, B. A. Efimova, and I. A. Smirnov, Semiconducting Lead Chalcogenides, edited by L. S. Stil’bans (Plenum, New York, 1970), pp. 35, 90.
12.
K. I.
Geiman
, I. A.
Drabkin
, M. A.
Kvantov
, and A. V.
Matveenko
, Sov. Phys. Semicond.
14
, 478
(1980
).13.
K. I.
Geiman
, I. A.
Drabkin
, A. V.
Matveenko
, E. A.
Mozhaev
, and R. V.
Parfen’ev
, Sov. Phys. Semicond.
11
, 499
(1977
).14.
B. A.
Akimov
, N. B.
Brandt
, S. A.
Bogoslovski
, L. I.
Ryabova
, and S. M.
Chudinov
, JETP Lett.
29
, 9
(1979
).15.
G. A.
Baraff
, E. O.
Kane
, and M.
Schluter
, Phys. Rev. B
21
, 3563
(1980
).16.
T.
Shimada
, K. L. I.
Kobayashi
, Y.
Katayama
, and K. F.
Komatsubara
, Phys. Rev. Lett.
39
, 143
(1977
).17.
Masahi
Iizumi
, Yoshikazu
Hamaguchi
, Kiichi
Komatsubara
, and Yoshiki
Kato
, J. Phys. Soc. Jpn.
38
, 443
(1975
).18.
Shuzo
Takano
, Sadakichi
Hotta
, Hajimu
Kawamura
, Yoshiki
Kato
, Keisuki L. I.
Kobayashi
, and Kiichi
Komatsubara
, J. Phys. Soc. Jpn.
37
, 1007
(1974
).19.
20.
This content is only available via PDF.
© 1985 American Institute of Physics.
1985
American Institute of Physics
You do not currently have access to this content.