Electroluminescence from metal‐insulator‐semiconductor structures with silicon dioxide (SiO2) layers containing varying amounts of excess silicon (Si) in the form of tiny Si precipitates have been studied in detail. Bulk insulator emission from the Si islands is shown to dominate over emission from either the SiO2 matrix material or the metallic gate material by studies of oxide or metal gate material, voltage polarity, and insulator thickness dependencies. Several distinct spectral peaks are observed in the energy range from 1.5 to 5 eV which cannot be attributed to optical interference effects. The higher‐energy peaks show a strong dependence on electric field relative to that at the lowest energy (1.7–2 eV). The entire spectral amplitude shows a strong dependence on high‐temperature annealing and excess Si content, decreasing drastically with increasing Si or decreasing annealing temperature. These results are shown to be consistent with light emission during electronic transitions between discrete energy levels associated with Si islands and/or their interface with the SiO2 host matrix material. Quantum size effects, similar to those observed in semiconductor superlattices, are proposed as one possible explanation.

1.
L. M.
Ternman
,
Proc. IEEE
59
,
1044
(
1971
).
2.
T.
Matsushita
,
T.
Aoki
,
T.
Otsu
,
H.
Yamoto
,
H.
Hayashi
,
M.
Okayama
, and
Y.
Kawana
,
IEEE Trans. Electron. Devices
ED‐23
,
826
(
1976
).
3.
D. J.
DiMaria
,
K. M.
DeMeyer
, and
D. W.
Dong
,
IEEE Electron. Dev. Lett.
EDL‐1
,
179
(
1980
).
4.
D. J.
DiMaria
,
K. M.
DeMeyer
,
C. M.
Serrano
, and
D. W.
Dong
,
J. Appl. Phys.
52
,
4825
(
1981
).
5.
D. J.
DiMaria
,
K. M.
DeMeyer
, and
D. W.
Dong
,
IEEE Trans. Electron. Devices
ED‐28
,
1047
(
1981
).
6.
D. J.
DiMaria
,
D. W.
Dong
,
C.
Falcony
, and
S. D.
Brorson
,
IEEE Electron. Dev. Lett.
EDL‐3
,
191
(
1982
).
7.
D. J.
DiMaria
,
D. W.
Dong
,
C.
Falcony
,
T. N.
Theis
,
J. R.
Kirtley
,
J. C.
Tsang
,
D. R.
Young
,
F. L.
Pesavento
, and
S. D.
Brorson
,
J. Appl. Phys.
54
,
5801
(
1983
).
8.
T. N.
Theis
,
J. R.
Kirtley
,
D. J.
DiMaria
, and
D. W.
Dong
,
Phys. Rev. Lett.
50
,
750
(
1983
).
9.
J. R.
Kirtley
,
T. N.
Theis
,
J. C.
Tsang
, and
D. J.
DiMaria
,
Phys. Rev. B
27
,
4601
(
1983
).
10.
Z. A.
Weinberg
,
W. C.
Johnson
, and
M. A.
Lampert
,
Appl. Phys. Lett.
25
,
42
(
1974
).
11.
A. S.
Ginovker
,
V. A.
Gritsenko
, and
S. P.
Sinitsa
,
Phys. Status Solidi A
26
,
489
(
1974
).
12.
T. N. Theis, J. R. Kirtley, D. J. DiMaria, and D. W. Dong, in Insulating Films on Semiconductors, edited by J. F. Verweij and D. R. Wolters (North‐Holland, Amsterdam, 1983), pp. 134–140.
13.
P.
Solomon
and
N.
Klein
,
J. Appl. Phys.
47
,
1023
(
1976
).
14.
D. J.
DiMaria
and
D. W.
Dong
,
J. Appl. Phys.
51
,
2722
(
1980
).
15.
D. J. DiMaria, in The Physics of MOS Interfaces, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener (Pergamon, New York, 1980), pp. 1–18, and references contained therein.
16.
D. I.
DiMaria
,
R.
Ghez
, and
D. W.
Dong
,
J. Appl. Phys.
51
,
4830
(
1980
).
17.
D. J.
Robbins
,
C.
Falcony
,
D. J.
DiMaria
,
D. W.
Dong
,
J. F.
DeGelormo
,
I. F.
Chang
, and
D. B.
Dove
,
IEEE Electron. Dev. Lett.
EDL‐3
,
148
(
1982
).
18.
D. J.
Robbins
,
D. J.
DiMaria
,
C.
Falcony
, and
D. W.
Dong
,
J. Appl. Phys.
54
,
4553
(
1983
).
19.
D. W.
Dong
,
E. A.
Irene
, and
D. R.
Young
,
J. Electrochem. Soc.
125
,
810
(
1978
).
20.
E. A.
Irene
,
N. J.
Chou
,
D. W.
Dong
and
E.
Tierney
,
Electrochem. Soc.
127
,
2518
(
1980
).
21.
E. H.
Nicollian
,
C. N.
Berglund
,
P. F.
Schmidt
, and
J. M.
Andrews
,
J. Appl. Phys.
42
,
5654
(
1971
).
22.
F. J.
Feigl
,
D. R.
Young
,
D. J.
DiMaria
,
S. K.
Lai
, and
J. A.
Calise
,
J. Appl. Phys.
52
,
5665
(
1981
).
23.
A.
Hartstein
and
D. R.
Young
,
Appl. Phys. Lett.
38
,
631
(
1981
).
24.
D. J. DiMaria, in The Physics of SiO2 and Its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), pp. 160–178, and references contained therein.
25.
A. M. Goodman, G. Harbeke, and E. F. Stetgmeier, in Physics of Semiconductors 1978, edited by B. L. H. Wilson (The Institute of Physics, Bristol and London, 1979), pp. 805–808.
26.
A.
Hartstein
,
J. C.
Tsang
,
D. J.
DiMaria
,
D. W.
Dong
,
Appl. Phys. Lett.
36
,
836
(
1980
).
27.
J. M. Gibson, in Electron Microscopy 1980, edited by P. Brederoo and G. Boom (The Seventh European Congress on Electron Microscopy Foundation, Leiden, 1980), Vol. 1, pp. 310–311.
28.
A. V.
Dvurechensky
,
F. L.
Edelman
, and
I. A.
Ryazantsev
,
Thin Solid Films
91
,
L55
(
1982
).
29.
R. C.
Fletcher
,
W. A.
Yager
,
G. L.
Pearson
,
A. N.
Holden
,
W. T.
Read
, and
F. R.
Meritt
,
Phys. Rev.
94
,
1392
(
1954
).
30.
D. J.
DiMaria
and
P. C.
Arnett
,
IBM J. Res. Develop
21
,
227
(
1977
), and references contained therein.
31.
S. K.
Lai
,
D. R.
Young
,
J. A.
Calise
, and
F. J.
Feigl
,
J. Appl. Phys.
52
,
5691
(
1981
).
32.
J. R.
Kirtley
,
T. N.
Theis
, and
J. C.
Tsang
,
Phys. Rev. B
24
,
5650
(
1981
).
33.
C.
Falcony
,
D. J.
DiMaria
,
D. W.
Dong
, and
K. M.
DeMeyer
,
J. Appl. Phys.
53
,
43
(
1982
).
34.
C. M. Gee and M. Kastner, in The Physics of MOS Insulators, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener (Pergamon, New York, 1980), pp. 132–136.
35.
M. H.
Brodsky
,
Solid State Commun.
36
,
55
(
1980
).
36.
R. A. Buckingham, in Quantum Theory, Vol. I, edited by D. R. Bates (Academic, New York, 1961), pp. 104–145.
37.
D. K.
Schroder
and
M. H.
White
,
IEEE Trans. Electron Devices
ED‐26
,
899
(
1979
).
38.
E.
Suzuki
,
Y.
Hayashi
, and
H.
Yanai
,
J. Appl. Phys.
50
,
7001
(
1979
).
39.
A.
Hartstein
,
D. J.
DiMaria
,
D. W.
Dong
, and
J. A.
Kucza
,
J. Appl. Phys.
51
,
3860
(
1980
).
40.
D. K.
Biegelsen
,
R. A.
Street
,
C. C.
Tsai
, and
J. C.
Knights
,
Phys. Rev. B
20
,
4839
(
1979
).
41.
D. J.
DiMaria
,
L. M.
Ephrath
, and
D. R.
Young
,
J. Appl. Phys.
50
,
4015
(
1979
), and references contained therein.
42.
J. R.
Aitken
,
J. Non‐Cryst. Solids
40
,
31
(
1980
), and references contained therein.
43.
M. Cardona, “Modulation Spectroscopy,” in Solid State Physics, edited by F. Seitz, D. Turnbull, and H. Ehrenreich (Academic, New York, 1969), pp. 1–358.
44.
E. E.
Mendez
,
L. L.
Chang
,
G.
Landgren
,
R.
Ludeke
,
L.
Esaki
, and
F. H.
Pollak
,
Phys. Rev. Lett.
46
,
1230
(
1981
).
45.
R.
Tsu
,
M.
Izu
,
V.
Cannella
,
S. R.
Ovshinsky
,
G.‐J.
Jan
, and
F. H.
Poilak
,
J. Phys. Soc. Jpn.
49
, Suppl. A,
1249
(
1980
).
46.
A. G.
Chynoweth
and
K. G.
McKay
,
Phys. Rev.
102
,
369
(
1956
).
47.
J. C.
Knights
,
R. A.
Street
, and
G.
Lucovsky
,
J. Non‐Cryst. Solids
35/36
,
279
(
1980
).
48.
J. P.
Mitchell
and
D. G.
Denure
,
Solid State Electron.
16
,
825
(
1973
).
49.
H.
Koyama
,
J. Appl. Phys.
51
,
2228
(
1980
).
50.
S. W. McKnight, in The Physics of MOS Insulators, edited by G. Lucovsky, S. T. Pantelides, and F. L. Galeener (Pergamon, New York, 1980), pp. 137–141.
51.
S.
Thomas
,
J. Appl. Phys.
45
,
161
(
1974
).
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