InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two‐step liquid‐phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 μm wide.
REFERENCES
1.
Zh. I.
Alferov
, I. N.
Arsent’ev
, D. Z.
Garbusov
, and V. D.
Rumyantsev
, Sov. Tech. Phys. Lett.
1
, 5
(1975
).2.
A. Usui, Y. Matsumoto, T. Inoshita, T. Mizutani, and H. Watanabe, Proceedings of International Symposium on Gallium Arsenide and Related Compounds Oiso, Japan (1981), p. 137.
3.
S.
Mukai
, H.
Yajima
, and J.
Shimada
, Jpn. J. Appl. Phys.
20
, L729
(1981
).4.
W. R.
Hitchens
, N.
Holonyak
, Jr., P. D.
Wright
, and J. J.
Coleman
, Appl. Phys. Lett.
27
, 245
(1975
).5.
Zh. I.
Alferov
, I. N.
Arsent’ev
, D. Z.
Garbusov
, V. D.
Rumyantsev
, and V. P.
Ulin
, Sov. Tech. Phys. Lett.
2
, 189
(1976
).6.
J. J.
Coleman
, N.
Holonyak
, Jr., M. J.
Ludowise
, and P. D.
Wright
, J. Appl. Phys.
47
, 2015
(1976
).7.
H.
Kressel
, G. H.
Olsen
, and C. J.
Nuese
, Appl. Phys. Lett.
30
, 249
(1977
).8.
R.
Chin
, N.
Holonyak
, Jr., H.
Shichijo
, W. O.
Groves
, D. L.
Kuene
, and J. A.
Rossi
, J. Appl. Phys.
48
, 3991
(1977
).9.
M.
Shimura
, A.
Fujimoto
, H.
Yasuda
, and S.
Yamashita
, Jpn. J. Appl. Phys.
21
, L338
(1982
).10.
11.
12.
K.
Wakao
, H.
Nishi
, S.
Isozumi
, S.
Ohsaka
, T.
Kusunoki
, and I.
Ushijima
, Electron. Lett.
20
, 374
(1984
).
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© 1984 American Institute of Physics.
1984
American Institute of Physics
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