A number of recent experimental silicon oxidation studies has suggested that the present form of the linear‐parabolic oxidation model is inadequate in explaining the results. However, the best available oxidation data are linear‐parabolic in shape. The present study relieves this dilemma by revising the linear‐parabolic model. The revisions are essentially twofold: a new transport flux, viz., transport in micropores is invoked and the viscoelastic properties of SiO2 are utilized. A revised linear‐parabolic model is obtained which better explains high and low temperature oxidation behavior, the formation higher density SiO2, and the initial oxidation regime.

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