GaAs/(GaAl)As channeled‐substrate laser with deep Zn diffusion for tight current confinement is reported. It has extremely low threshold current (as low as 12 mA), high differential quantum efficiency, single lateral and longitudinal mode operation up to 10 mW. It has T0 of about 200 °C and the rate of threshold current change is only about 0.07 mA/°C from 10 to 70 °C.
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© 1983 American Institute of Physics.
1983
American Institute of Physics
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