Reemission has been measured during implantation of 1 keV and 20 keV helium ions in CVD SiC at room temperature and at 600 °C. The reemission behavior depends strongly on target temperature as well as ion energy, and there exists a close relationship between the reemission behavior and surface features. The flaking of CVD SiC is explained by crack propagation through the implanted layer, with gas pressure being the driving force for cracking. The effects on the reemission behavior of prebombardment with helium ions having continuous energy distribution have been also measured.
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Research Article| May 01 1983
Helium reemission during implantation of silicon carbide
S. Miyagawa, Y. Ato, Y. Miyagawa; Helium reemission during implantation of silicon carbide. J. Appl. Phys. 1 May 1983; 54 (5): 2302–2306. https://doi.org/10.1063/1.332386
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