Influence of oxygen and carbon on donor formation by annealing at 700 °C was studied by infrared absorption, resistivity, and spreading resistance measurements in Czochralski‐grown silicon. Donor concentration correlates with both oxygen and carbon reductions by the annealing at 700 °C. Donor distribution corresponds to etch pit distribution observed after the annealing. The donor is proposed to be oxygen precipitate nucleated at carbon site. The influence of the donor generation on the device parameter in metal‐oxide‐ silicon memory field‐effect transistors is discussed.
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1982
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