Ion implantation into the n+ region of Si gated diodes gives leakage currents equivalent to unimplanted diodes after a 700 °C anneal and several orders of magnitude lower after a 900 °C anneal. It is suggested that the improvement in leakage current occurs due to gettering of metallic impurities from the depletion region.

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© 1977 American Institute of Physics.
1977
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