The photoelectromagnetic effect is studied in single crystals of CuInSe2. A region of light excitation is found in which the dependence of iPEM on light intensity is linear. From the experimental data, a lifetime of the minority carriers τn=0.6×10−9 sec and a surface recombination velocity s=3×105 cm/sec are determined.
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© 1977 American Institute of Physics.
1977
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