Photoelectromagnetic properties of HgI₂ Available to Purchase

The photoelectromagnetic effect and photoconductivity measurements at room temperature in HgI₂ single crystals are reported for the first time. The sublinear dependence of these effects on the incident light intensity suggests the occurrence of trapping effects; this is taken into account by modifying the already developed calculations and introducing an ’’effective lifetime’’ τ* and an ’’effective diffusion length’’ L*. These two parameters are related to the electron and hole lifetimes. τ* and L* are calculated by the experimental data and they are dependent on the incident light intensity with a −1/3 power dependence; at an incident photon flux of 10¹⁵ photon cm⁻² sec⁻¹ we found τ*=9×10⁻⁸ sec and L*=6×10⁻⁵ cm.