A resonance Raman scattering study is presented of the annealing behavior of Cu2O implanted with 180‐keV Cd++ ions to a dose of 1×1014 ions/cm2. As annealing progressed, large changes were observed in the Raman spectra which were obtained with the 488‐ and 476.5‐nm lines of an argon laser to provide excitation nearly resonant with the 1S ’’blue’’ exciton at 480 nm. A detailed comparison is made of the spectra obtained during annealing with spectra previously reported on unannealed samples implanted with doses ranging from 1.5×1011 to 1.5×1015 ions/cm2. The analysis indicates a strong annealing stage at −250°C, after which apparently less than 1% of the implantation‐produced damage remains.
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