The annealing behavior of photoluminescence spectra of silicon‐doped n‐type (100) GaAs specimens and zinc‐ion‐implanted specimens at room temperature has been investigated at 77 K. Several energy levels associated with Ga or As vacancies have been observed in unimplanted specimens during the anneal stage between 200 and 900 °C. It has been also observed that dopant silicon atoms migrate from Ga sites to As sites in the unimplanted specimen which was annealed above 600 °C. The irradiated damage in the Zn‐implanted specimen was removed by annealing at 600 °C for 20 min. The maximum intensity of total emission due to the Zn‐acceptor level was obtained after annealing at 850 °C, and the total emission intensity decreased above this temperature.

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