Experiments on very thin films and systems composed of small particles have shown transition temperatures significantly higher than the bulk Tc. Of the numerous ideas advanced to explain the high Tc's in these films, one of the most exciting is the suggestion of Cohen and Douglass that superconductive pairing can occur across dielectric barriers, and thereby lead to high Tc's. Recent results on the Tc of thin superconductors in contact with dielectric barriers, evaporated on cryogenic substrates, are presented. Some representative Tc's obtained in these experiments are Al∼5.7°K, Zn∼1.9°K, Sn∼6°K, In∼4.5°K, and Pb∼7.1°K. In the case of Al, Sn, and Zn these Tc's are much higher than the values found by Buckel and Hilsch for films deposited on quartz at liquid‐helium temperatures. Explanations other than the dielectric barrier idea, such as ``amorphorus structure'' and the suggestion of Ginzburg that surface interactions may modify Tc, are also discussed. In the course of these experiments to investigate high Tc's in films it was found that very thin continuous films (∼20 Å or less) could be prepared at cryogenic temperatures. An investigation of superconductivity in these ultrathin films showed that Tc was much lower than the Tc of the thicker films. This occurred in all the metals measured, which included Pb, Al, Sn, and Bi. An explanation of these results in terms of the destruction of long‐range order in two‐dimensional systems due to fluctuations in the Ginzburg‐Landau order parameter will be discussed. By using this idea and numerical values from the data, estimates can be made of the possibility of obtaining very high Tc's in films approaching a few atomic layers.
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May 1968
Research Article|
May 01 1968
Superconductive Phenomena in Ultrathin Films
M. Strongin;
M. Strongin
Brookhaven National Laboratory, Upton, New York
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O. F. Kammerer
O. F. Kammerer
Brookhaven National Laboratory, Upton, New York
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J. Appl. Phys. 39, 2509–2514 (1968)
Citation
M. Strongin, O. F. Kammerer; Superconductive Phenomena in Ultrathin Films. J. Appl. Phys. 1 May 1968; 39 (6): 2509–2514. https://doi.org/10.1063/1.1656598
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