The kinetics of Cottrell atmosphere formation around dislocations is studied numerically. The spirit of the calculation presented here follows closely that presented by Bullough and Newman, although our conclusions about strain aging are different. We have calculated solute distributions for a number of times using the standard dislocation‐solute atom interaction potentials, − A/r and − A cos(θ)/r, for screw and edge dislocations, respectively. It is shown that for suitably strong dislocation‐solute binding and appropriate dislocation densities, a Harper‐type strain aging can be predicted on the basis of stress‐assisted‐diffusion theory without ascribing any special properties to the dislocation core regions. The place of the Harper law and the Bullough and Newman calculations in the over‐all picture of strain aging is discussed.
Skip Nav Destination
Article navigation
November 1967
Research Article|
November 01 1967
Stress‐Assisted Diffusion to Dislocations and its Role in Strain Aging Available to Purchase
L. V. Meisel
L. V. Meisel
Watervliet Arsenal, Watervliet, New York
Search for other works by this author on:
L. V. Meisel
Watervliet Arsenal, Watervliet, New York
J. Appl. Phys. 38, 4780–4784 (1967)
Article history
Received:
May 01 1967
Citation
L. V. Meisel; Stress‐Assisted Diffusion to Dislocations and its Role in Strain Aging. J. Appl. Phys. 1 November 1967; 38 (12): 4780–4784. https://doi.org/10.1063/1.1709219
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Related Content
Role of dislocation blocking in limiting strain relaxation in heteroepitaxial films
J. Appl. Phys. (December 1994)
The continuity of dislocations
J. Math. Phys. (September 1985)
Work hardening and strain relaxation in strained‐layer buffers
Appl. Phys. Lett. (August 1991)
On the description of crystal defects by point‐force arrays
J. Appl. Phys. (November 1977)
Effect of anisotropy on the excess stress and critical thickness of capped Si1−xGex strained layers
J. Appl. Phys. (June 1994)