Apparatus is described for growing refractory crystals using the induction plasma torch in a Verneuil‐type geometry. The plasma torch makes possible crystal growth at higher temperatures than can be achieved with flames and in inert or reactive atmospheres. Conditions are given for growth of sapphire, stabilized zirconia, and niobium crystals.
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© 1961 The American Institute of Physics.
1961
The American Institute of Physics
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