Investigating high-performance and stable spintronics devices has been a research hotspot in recent years. In this paper, we employed first-principles methods and Monte Carlo (MC) simulations to explore the structure, electronic, and magnetic properties of monolayer NbSe2, as well as its behavior under carrier concentration modulation. The research on the electronic structure reveals that by introducing an appropriate amount of holes, the material can undergo a transition from metal to a half-metal state, achieving 100% high spin polarization. Investigation of magnetic crystalline anisotropy shows that the magnetic crystal anisotropy energy of 1210 μeV in out-of-plane is beneficial to maintain ferromagnetic order at high temperatures. In addition, doping with suitable carriers can effectively enhance or strengthen the ferromagnetic coupling in NbSe2 so that the magnetization easy axis is shifted. This reveals the potential application prospects of NbSe2 in electronically controlled spintronic devices. Analysis of the Fermi surface shows that both holes and electron doping increase the Fermi velocity of the material. The effect of hole doping is particularly significant, indicating its potential application in Fermi velocity engineering. Under the theoretical framework of the extended two-dimensional Ising model, based on MC simulation, the Curie temperature (TC) of NbSe2 is predicted to be 162 K. The effects of carrier concentration and the magnetic field on the magnetic and thermal properties of monolayer NbSe2 are simulated. The results show that appropriately increasing the hole doping concentration and magnetic field is conducive to obtaining ferromagnetic half-metallic materials with TC higher than room temperature, which provides theoretical support for experimental preparation.

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