The structure and optical characteristics of thin (∼30 nm) wurtzite AlInN films grown pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al1−xInxN layers are grown by metalorganic chemical vapor deposition, resulting in films with varying In content from x = 0.142 to 0.225. They are measured using atomic force microscopy, x-ray diffraction, reciprocal space mapping, and spectroscopic ellipsometry (SE). The pseudomorphic AlInN layers provide a set where optical properties can be determined without additional variability caused by lattice relaxation, a crucial need for designing devices. They have smooth surfaces (rms < 0.29 nm) with minimum pit areas when the In content is near lattice-matched to GaN. As expected, SE shows that the refractive index increases and the bandgap energy decreases with increased In-content. Plots of bandgap energy vs In content are fitted with a single bowing parameter of 3.19 eV when using bandgap energies for AlN and InN pseudomorphic to GaN, which is lower than previous measurements and closer to theoretical predictions.
REFERENCES
1.
J. Y.
Tsao
, M. H.
Crawford
, M. E.
Coltrin
, A. J.
Fischer
, D. D.
Koleske
, G. S.
Subramania
, G. T.
Wang
, J. J.
Wierer
, and R. F.
Karlicek
, “Toward smart and ultra-efficient solid-state lighting
,” Adv. Opt. Mater.
2
(9
), 809
–836
(2014
). 2.
J. Y.
Tsao
, S.
Chowdhury
, M. A.
Hollis
, D.
Jena
, N. M.
Johnson
, K. A.
Jones
, and J. A.
Simmons
, “Ultrawide-bandgap semiconductors: Research opportunities and challenges
,” Adv. Electr. Mater.
4
(1
), 1600501
(2018
). 3.
U. K.
Mishra
, P.
Parikh
, and Y. F.
Wu
, “AlGaN/GaN HEMTs—An overview of device operation and applications
,” Proc. IEEE
90
(6
), 1022
–1031
(2002
). 4.
R.
Butté
, J.-F.
Carlin
, E.
Feltin
, M.
Gonschorek
, S.
Nicolay
, G.
Christmann
, D.
Simeonov
, A.
Castiglia
, J.
Dorsaz
, H. J.
Buehlmann
, S.
Christopoulos
, G.
Baldassarri Höger von Hög
, A. J. D.
Grundy
, M.
Mosca
, C.
Pinquier
, M. A.
Py
, F.
Demangeot
, J.
Frandon
, P. G.
Lagoudakis
, J. J.
Baumberg
, and N.
Grandjean
, “Current status of AlInN layers lattice-matched to GaN for photonics and electronics
,” J. Phys. D: Appl. Phys.
40
(20
), 6328
–6344
(2007
). 5.
B. E.
Foutz
, O.
Ambacher
, M. J.
Murphy
, V.
Tilak
, and L. F.
Eastman
, “Polarization induced charge at heterojunctions of the III-V nitrides and their alloys
,” Phys. Status Solidi B
216
(1
), 415
–418
(1999
). 6.
M.
Lachab
, M.
Sultana
, Q.
Fareed
, F.
Husna
, V.
Adivarahan
, and A.
Khan
, “Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate
,” J. Phys. D: Appl. Phys.
47
(13
), 135108
(2014
). 7.
D.
Marti
, S.
Tirelli
, V.
Teppati
, L.
Lugani
, J.-F.
Carlin
, M.
Malinverni
, N.
Grandjean
, and C. R.
Bolognesi
, “94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts
,” IEEE Electron Device Lett.
36
(1
), 17
–19
(2015
). 8.
J. F.
Carlin
, C.
Zellweger
, J.
Dorsaz
, S.
Nicolay
, G.
Christmann
, E.
Feltin
, R.
Butté
, and N.
Grandjean
, “Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
,” Phys. Status Solidi B
242
(11
), 2326
–2344
(2005
). 9.
C.
Berger
, A.
Dadgar
, J.
Bläsing
, A.
Lesnik
, P.
Veit
, G.
Schmidt
, T.
Hempel
, J.
Christen
, A.
Krost
, and A.
Strittmatter
, “Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
,” J. Cryst. Growth
414
, 105
–109
(2015
). 10.
T.
Takeuchi
, S.
Kamiyama
, M.
Iwaya
, and I.
Akasaki
, “GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
,” Rep. Prog. Phys.
82
(1
), 012502
(2019
). 11.
M. R.
Peart
, N.
Tansu
, and J. J.
Wierer
, “AlInN for vertical power electronic devices
,” IEEE Trans. Electron Devices
65
(10
), 4276
–4281
(2018
). 12.
M. R.
Peart
, D.
Borovac
, W.
Sun
, R.
Song
, N.
Tansu
, and J. J. J.
Wierer
, “AlInN/GaN diodes for power electronic devices
,” Appl. Phys. Express
13
, 091006
(2020
). 13.
K.
Arakawa
, K.
Miyoshi
, R.
Iida
, Y.
Kato
, T.
Takeuchi
, M.
Miyoshi
, S.
Kamiyama
, M.
Iwaya
, I.
Akasaki
et al, “450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers
,” Jpn. J. Appl. Phys.
58
, SCCC28 (2019
). 14.
Y.
Kato
, K.
Miyoshi
, T.
Takeuchi
, T.
Inagaki
, M.
Iwaya
, S.
Kamiyama
, I.
Akasaki
et al, “Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions
,” Appl. Phys. Express
14
(6
), 061002 (2021
). 15.
P.
Kordos
, M.
Mikulics
, R.
Stoklas
, K.
Čičo
, A.
Dadgar
, D.
Grűtzmacher
, and A.
Krost
, “Thermally oxidized InAlN of different compositions for InAlN/GaN heterostructure field-effect transistors
,” J. Electron. Mater.
41
(11
), 3013
–3016
(2012
). 16.
Y.
Bourlier
, M.
Bouttemy
, O.
Patard
, P.
Gamarra
, S.
Piotrowicz
, J.
Vigneron
, R.
Aubry
, S.
Delage
, and A.
Etcheberry
, “Investigation of InAlN layers surface reactivity after thermal annealings: A complete XPS study for HEMT
,” ECS J. Solid State Sci. Technol.
7
(6
), P329
–P338
(2018
). 17.
M.
Miyoshi
, M.
Yamanaka
, T.
Egawa
, and T.
Takeuchi
, “Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
,” J. Cryst. Growth
506
, 40
–44
(2019
). 18.
R. B.
Chung
, F.
Wu
, R.
Shivaraman
, S.
Keller
, S. P.
DenBaars
, J. S.
Speck
, and S.
Nakamura
, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition
,” J. Cryst. Growth
324
(1
), 163
–167
(2011
). 19.
Z. L.
Miao
, T. J.
Yu
, F. J.
Xu
, J.
Song
, L.
Lu
, C. C.
Huang
, Z. J.
Yang
, X. Q.
Wang
, G. Y.
Zhang
, X. P.
Zhang
, D. P.
Yu
, and B.
Shen
, “Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
,” J. Appl. Phys.
107
(4
), 043515
(2010
). 20.
T.
Aschenbrenner
, H.
Dartsch
, C.
Kruse
, M.
Anastasescu
, M.
Stoica
, M.
Gartner
, A.
Pretorius
, A.
Rosenauer
, T.
Wagner
, and D.
Hommel
, “Optical and structural characterization of AlInN layers for optoelectronic applications
,” J. Appl. Phys.
108
(6
), 063533 (2010
). 21.
T. C.
Sadler
, M. J.
Kappers
, and R. A.
Oliver
, “The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers
,” J. Cryst. Growth
311
(13
), 3380
–3385
(2009
). 22.
E.
Iliopoulos
, A.
Adikimenakis
, C.
Giesen
, M.
Heuken
, and A.
Georgakilas
, “Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry
,” Appl. Phys. Lett.
92
(19
), 191907
(2008
). 23.
T.
Onuma
, S. F.
Chichibu
, Y.
Uchinuma
, T.
Sota
, S.
Yamaguchi
, S.
Kamiyama
, H.
Amano
, and I.
Akasaki
, “Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
,” J. Appl. Phys.
94
(4
), 2449
–2453
(2003
). 24.
W.
Walukiewicz
, J. W.
Ager
, K. M.
Yu
, Z.
Liliental-Weber
, J.
Wu
, S. X.
Li
, R. E.
Jones
, and J. D.
Denlinger
, “Structure and electronic properties of InN and In-rich group III-nitride alloys
,” J. Phys. D: Appl. Phys.
39
(5
), R83
(2006
). 25.
M.
Miyoshi
, M.
Yamanaka
, T.
Egawa
, and T.
Takeuchi
, “A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate
,” Jpn. J. Appl. Phys.
58
, SC1006
(2019
). 26.
G. Y.
Liu
, J.
Zhang
, X.-H.
Li
, G. S.
Huang
, T.
Paskova
, K. R.
Evans
, H.
Zhao
, and N.
Tansu
, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
,” J. Cryst. Growth
340
(1
), 66
–73
(2012
). 27.
K. S.
Kim
, A.
Saxler
, P.
Kung
, M.
Razeghi
, and K. Y.
Lim
, “Determination of the band-gap energy of Al1−xInxN grown by metal-organic chemical-vapor deposition
,” Appl. Phys. Lett.
71
(6
), 800
–802
(1997
). 28.
E.
Sakalauskas
, P.
Schley
, J.
Räthel
, T. A.
Klar
, R.
Müller
, J.
Pezoldt
, K.
Tonisch
, J.
Grandal
, M. A.
Sánchez-García
, E.
Calleja
, A.
Vilalta-Clemente
, P.
Ruterana
, and R.
Goldhahn
, “Optical properties of InN grown on Si(111) substrate
,” Phys. Status Solidi A
207
(5
), 1066
–1069
(2010
). 29.
D.
Borovac
, W.
Sun
, M. R.
Peart
, R.
Song
, J. J.
Wierer
, and N.
Tansu
, “Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy
,” J. Cryst. Growth
548
, 125847
(2020
). 30.
E.
Palmese
, M. R.
Peart
, D.
Borovac
, R.
Song
, N.
Tansu
, and J. J.
Wierer
, “Oxidation kinetics of Al0.82In0.18N lattice-matched to GaN
,” J. Appl. Phys.
129
, 125105
(2021
). 31.
E.
Sakalauskas
, H.
Behmenburg
, C.
Hums
, P.
Schley
, G.
Rossbach
, C.
Giesen
, M.
Heuken
, H.
Kalisch
, R. H.
Jansen
, J.
Bläsing
, A.
Dadgar
, A.
Krost
, and R.
Goldhahn
, “Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
,” J. Phys. D: Appl. Phys.
43
(36
), 365102 (2010
). 32.
Z. T.
Chen
, K.
Fujita
, J.
Ichikawa
, and T.
Egawa
, “Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
,” J. Appl. Phys.
111
(5
), 053535
(2012
). 33.
D. F.
Brown
, S.
Keller
, T. E.
Mates
, J. S.
Speck
, S. P.
DenBaars
, and U. K.
Mishra
, “Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition
,” J. Appl. Phys.
107
(3
), 033509 (2010
). 34.
Z. L.
Miao
, T. J.
Yu
, F. J.
Xu
, J.
Song
, L.
Lu
, C. C.
Huang
, Z. J.
Yang
, X. Q.
Wang
, G. Y.
Zhang
, X. P.
Zhang
, D. P.
Yu
, and B.
She
, “Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
,” J. Appl. Phys.
107
(4
), 043515
(2010
). 35.
A.
Cremades
, L.
Görgens
, O.
Ambacher
, M.
Stutzmann
, and F.
Scholz
, “Structural and optical properties of Si-doped GaN
,” Phys. Rev. B
61
(4
), 2812
–2818
(2000
). 36.
X. R.
Huang
, J.
Bai
, M.
Dudley
, R. D.
Dupuis
, and U.
Chowdhury
, “Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
,” Appl. Phys. Lett.
86
(21
), 211916 (2005
).37.
T.
Onuma
, S. F.
Chichibu
, T.
Sota
, K.
Asai
, S.
Sumiya
, T.
Shibata
, and M.
Tanaka
, “Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
,” Appl. Phys. Lett.
81
(4
), 652
–654
(2002
). 38.
P.
Schley
, R.
Goldhahn
, G.
Gobsch
, M.
Feneberg
, K.
Thonke
, X.
Wang
, and A.
Yoshikawa
, “Influence of strain on the band gap energy of wurtzite InN
,” Phys. Status Solidi B
246
(6
), 1177
–1180
(2009
). 39.
P.
Rinke
, M.
Winkelnkemper
, A.
Qteish
, D.
Bimberg
, J.
Neugebauer
, and M.
Scheffler
, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
,” Phys. Rev. B
77
(7
), 075202 (2008
). 40.
J.
Wu
, W.
Walukiewicz
, K. M.
Yu
, J. W.
Ager
, E. E.
Haller
, H.
Lu
, W. J.
Schaff
, Y.
Saito
, and Y.
Nanishi
, “Unusual properties of the fundamental band gap of InN
,” Appl. Phys. Lett.
80
(21
), 3967
–3969
(2002
). 41.
G.
Orsal
, Y.
El Gmili
, N.
Fressengeas
, J.
Streque
, R.
Djerboub
, T.
Moudakir
, S.
Sundaram
, A.
Ougazzaden
, and J. P.
Salvestrini
, “Bandgap energy bowing parameter of strained and relaxed InGaN layers
,” Opt. Mater. Express
4
(5
), 1030–1041 (2014
). 42.
M. D.
McCluskey
, C. G.
Van de Walle
, C. P.
Master
, L. T.
Romano
, and N. M.
Johnson
, “Large band gap bowing of InxGa1-xN alloys
,” Appl. Phys. Lett.
72
(21
), 2725
–2726
(1998
). 43.
Y. F.
Duan
, L. X.
Qin
, L.
Shi
, G.
Tang
, and H. L.
Shi
, “Hybrid density functional theory study of band gap tuning in AlN and GaN through equibiaxial strains
,” Appl. Phys. Lett.
100
(2
), 022104 (2012
).44.
A.
Bhouri
and J.-L.
Lazzari
, “Composition dependence of the band offsets in wurtzite nitride-based heterojunctions
,” Mater. Sci. Semicond. Process.
41
, 121
–131
(2016
). 45.
C. E.
Dreyer
, A.
Janotti
, and C. G.
Van de Walle
, “Effects of strain on the electron effective mass in GaN and AlN
,” Appl. Phys. Lett.
102
(14
), 142105 (2013
). 46.
O.
Namir
, J.
Kioseoglou
, P.
Komninou
, T.
Karakostas
, and I.
Belabbas
, “Large out-of-plane piezoelectric response of wurtzite InN under biaxial strain
,” Model. Simul. Mater. Sci.
29
(6
), 065013 (2021
). 47.
M.
Goano
, E.
Bellotti
, E.
Ghillino
, G.
Ghione
, and K. F.
Brennan
, “Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system.: Part I. Binary compounds GaN, AlN, and InN
,” J. Appl. Phys.
88
(11
), 6467
–6475
(2000
). 48.
R. R.
Pela
, C.
Caetano
, M.
Marques
, L. G.
Ferreira
, J.
Furthmuller
, and L. K.
Teles
, “Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
,” Appl. Phys. Lett.
98
(15
), 151907 (2011
).© 2023 Author(s). Published under an exclusive license by AIP Publishing.
2023
Author(s)
You do not currently have access to this content.
