Non-volatile memory devices have been getting significant attention from researchers worldwide in recent years due to their application in resistive random access memory and neuromorphic computing. Here, we have fabricated polyvinyl alcohol-graphene oxide (PVA-GO) composite as an active material for the resistive switching with different concentrations of GO (0.0, 0.1, 0.2, 0.3, 0.4, and 0.5 wt. % GO solution) dispersed in 5 wt. % PVA matrix in a 2:1 volume ratio. We demonstrate the non-volatile forming free resistive switching properties of Ag/PVA-GO/Ag devices. Structural properties of PVA-GO composites are established from the x-ray diffraction pattern, which indicates the complete dispersion of GO inside the PVA matrix. The Ag/PVA-GO-0.1 wt. %/Ag device shows better bipolar resistive switching at VSET ∼ 0.4 V and VRESET at ∼−0.8 V. This device indicates well-resolved two distinct states at a read voltage of 0.1 V in endurance and retention measurements. The fabricated device switches successfully tested for 2.5 × 103 cycles and retains its state for 3.36 × 103 s without any observable degradation. Furthermore, the non-volatile retention property was modeled using time series analysis. For this, Holt–Winter's exponential smoothing technique was utilized. Additionally, the charge–flux linkage characteristic shows the double-valued function, and time domain–charge and time domain–flux show asymmetric behaviors. The electrical conduction mechanism exhibits ohmic behavior in the entire region of the low resistance state and the lower voltage region of the high resistance state. In the high-voltage region of the high resistance state, the space charge-limited conduction mechanism is observed. The resistive switching behavior is explained with the help of an appropriate model.

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