The solid solution Ba Sr TiO (BSTO) displays dielectric response that is highly tunable, while also exhibiting low losses in a broad frequency regime, including the microwave band. Therefore, there is a need for a better understanding of the influence of the BSTO microstructure on its relaxor properties and performance in a variety of technological applications. Since the local polarization in BSTO is strongly dependent on composition, so is its response to an applied AC field. In this work, we have adopted a phase field method to study the frequency-dependent dielectric response of this system while accounting for the local fluctuations in the solid-solution composition. By utilizing a thermodynamic potential that includes spatial dependence on the averaged Sr content, we connected relaxor-like features in the dielectric dispersion to local spatial inhomogeneities, such as average size of Sr- or Ba-rich regions, across a wide range of temperatures. These results show that the adopted simple coarse-grained approach to the relaxor problem is sensitive enough to reveal correlations between the frequency and temperature dependence of the dielectric response and modulations in the material morphology and microstructure.
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Modeling structure–properties relations in compositionally disordered relaxor dielectrics at the nanoscale
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14 September 2023
Research Article|
September 08 2023
Modeling structure–properties relations in compositionally disordered relaxor dielectrics at the nanoscale
Ashok Gurung
;
Ashok Gurung
a)
(Data curation, Formal analysis, Investigation, Methodology, Resources, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Physics, University of Connecticut
, Storrs, Connecticut 06269, USA
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John Mangeri
;
John Mangeri
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Resources, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
2
Materials Research and Technology Department, Luxembourg Institute of Science and Technology
, Esch-sur-Alzette, Luxembourg
3
Department of Materials Science & Engineering, and Institute of Materials Science, University of Connecticut
, Storrs, Connecticut 06269, USA
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Aaron M. Hagerstrom;
Aaron M. Hagerstrom
(Conceptualization)
4
Communications Technology Laboratory (CTL), National Institute of Standards and Technology (NIST)
, 325 Broadway, Boulder, Colorado 80305, USA
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Nathan D. Orloff
;
Nathan D. Orloff
(Conceptualization)
4
Communications Technology Laboratory (CTL), National Institute of Standards and Technology (NIST)
, 325 Broadway, Boulder, Colorado 80305, USA
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S. Pamir Alpay
;
S. Pamir Alpay
(Conceptualization, Funding acquisition, Investigation, Project administration, Resources)
1
Department of Physics, University of Connecticut
, Storrs, Connecticut 06269, USA
3
Department of Materials Science & Engineering, and Institute of Materials Science, University of Connecticut
, Storrs, Connecticut 06269, USA
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Serge Nakhmanson
Serge Nakhmanson
b)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Physics, University of Connecticut
, Storrs, Connecticut 06269, USA
3
Department of Materials Science & Engineering, and Institute of Materials Science, University of Connecticut
, Storrs, Connecticut 06269, USA
b)Author to whom correspondence should be addressed: serge.nakhmanson@uconn.edu
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b)Author to whom correspondence should be addressed: serge.nakhmanson@uconn.edu
a)
Electronic mail: ashok.gurung@uconn.edu
J. Appl. Phys. 134, 104102 (2023)
Article history
Received:
June 01 2023
Accepted:
August 09 2023
Citation
Ashok Gurung, John Mangeri, Aaron M. Hagerstrom, Nathan D. Orloff, S. Pamir Alpay, Serge Nakhmanson; Modeling structure–properties relations in compositionally disordered relaxor dielectrics at the nanoscale. J. Appl. Phys. 14 September 2023; 134 (10): 104102. https://doi.org/10.1063/5.0160448
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