Here, glancing angle deposition is employed to synthesize the undoped GeO2 and Mg-doped (0.4 and 0.8 at. %) GeO2 nanowires (NWs) on a Si substrate. The microscopic images show the formation of the NW-like morphology of the grown materials. The gradual decrease in the average ratio of length to diameter depicts the worsening of the formation of NWs with the incorporation of Mg into the GeO2 host lattice. This also affects the crystallinity characteristics of the materials, which have been demonstrated from the selected area electron diffraction (SAED) pattern of the materials. The polycrystallinity nature of undoped GeO2 NWs changes to amorphous due to the introduction of Mg, which has been confirmed from both the obtained SAED and x-ray diffraction patterns of the samples. The presence of Mg was confirmed from the obtained broad bands at 473 and 437 cm−1 in the Fourier transmission spectrum of the doped samples. The increasing conductance with the temperature of Au/undoped GeO2 devices can be explained by the thermionic emission process, whereas the Mg-GeO2 device shows an overall decrease in conductance with increasing temperature. We have ascribed the origin of this abnormal conductance as the positive temperature coefficient of resistance, which is one of the first reports, due to the generation of random grain boundaries and enormous electron trapping at the Au/Mg-GeO2 NW junction. Furthermore, the undoped GeO2 NW device shows good temperature-dependent conductivity as well as stability compared to the doped one.
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28 January 2023
Research Article|
January 24 2023
Positive temperature coefficient of resistance of Mg-GeO2 nanowire array film
Ankita Choudhury;
Ankita Choudhury
(Data curation, Formal analysis, Investigation, Writing – original draft)
1
Department of Physics, National Institute of Technology Durgapur
, Durgapur 713209, India
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Arka Dey
;
Arka Dey
(Formal analysis, Investigation, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Physics, National Institute of Technology Durgapur
, Durgapur 713209, India
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Chiranjib Ghosh
;
Chiranjib Ghosh
(Data curation, Investigation)
1
Department of Physics, National Institute of Technology Durgapur
, Durgapur 713209, India
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Avijit Dalal
;
Avijit Dalal
(Data curation)
1
Department of Physics, National Institute of Technology Durgapur
, Durgapur 713209, India
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Rajat Mahapatra
;
Rajat Mahapatra
(Data curation)
2
Department of Electronics and Communication Engineering, National Institute of Technology Durgapur
, Durgapur 713209, India
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Saikat Biswas
;
Saikat Biswas
(Data curation)
2
Department of Electronics and Communication Engineering, National Institute of Technology Durgapur
, Durgapur 713209, India
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Nilanjan Halder
;
Nilanjan Halder
(Data curation)
3
Department of Physics, Manipal University Jaipur
, Jaipur 303007, Rajasthan, India
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Aniruddha Mondal
Aniruddha Mondal
a)
(Conceptualization, Formal analysis, Investigation, Methodology, Supervision, Validation, Writing – review & editing)
1
Department of Physics, National Institute of Technology Durgapur
, Durgapur 713209, India
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 133, 045302 (2023)
Article history
Received:
October 14 2022
Accepted:
December 31 2022
Citation
Ankita Choudhury, Arka Dey, Chiranjib Ghosh, Avijit Dalal, Rajat Mahapatra, Saikat Biswas, Nilanjan Halder, Aniruddha Mondal; Positive temperature coefficient of resistance of Mg-GeO2 nanowire array film. J. Appl. Phys. 28 January 2023; 133 (4): 045302. https://doi.org/10.1063/5.0130729
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