In the domain of phase change memories (PCMs), intensive research is conducted to reduce the programming cycle cost. The RESET operation is done by melting the PCM and then quenching the liquid phase to put it back to the amorphous state. In most of the devices, the heating is realized by the Joule effect with a titanium nitride (TiN) component put in contact with the PCM itself. One of the crucial points to improve the efficiency of this technology is to characterize the thermal contact between TiN and PCM. Having a low thermal resistance between the heater and the PCM ensures the heat transfer between the two is as efficient as possible. In this work, the interfacial thermal resistance between Ge-doped G Sb Te (GeGST)/TiN in multilayer systems has been characterized, and the influence of the compressive stress exerted by the TiN layers on the GeGST crystallization has been highlighted.
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