Bound states in the continuum (BIC) in silicon nanodisk array on mirror structure: Perfect absorption associated with quasi-BIC below the bandgap

A structure composed of a hexagonal array of Si nanodisks having toroidal dipole resonances and a reflecting mirror separated by a SiO₂ spacer is proposed as a platform that exhibits narrow-band perfect absorption in the Si sub-bandgap wavelength range for a CMOS compatible Si based photodetector operating below the bandgap range. The numerical simulation reveals that the structure possesses Fabry–Pérot bound states in the continuum at proper spacer thicknesses due to the interference between the toroidal dipole and its image dipole. By slightly detuning the spacer thickness to meet the critical coupling condition, narrow-band perfect absorption appears despite assumption of a very small extinction coefficient (5 × 10⁻⁴). The wavelength of the perfect absorption is controlled in a wide range by the structural parameters of a Si nanodisk hexagonal array and is insensitive to the fluctuation of the extinction coefficient and the choice of a metallic mirror. In the structure, over 90% of incident power can be absorbed in the Si region. This suggests that the structure can be used as a narrow-band photodetector operating in the Si sub-bandgap wavelength range. We also evaluate the sensing performance of the proposed structure as an intensity based refractive index sensor operating in the near-infrared range.