The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with hysteresis in the current–voltage response and its eventual multiple crossing, produced by this universally available ingredient, are signatures of this process. Here, we deliver a microscopic and analytical solution for these behaviors, understood as the modulation of the topology of the current–voltage loops. Memory emergence thus becomes a characterization tool for intrinsic features that affect the electronic transport of solids such as the nature and number of trapping sites, intrinsic symmetry constraints, and natural relaxation time scales. This method is also able to reduce the seeming complexity of frequency-dependent electrochemical impedance and cyclic voltammetry observable for a variety of systems to a combination of simple microscopic ingredients.
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Tuning the conductance topology in solids
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7 April 2023
Research Article|
April 03 2023
Tuning the conductance topology in solids
Victor Lopez-Richard
;
Victor Lopez-Richard
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Physics Department, Federal University of São Carlos
, 13565-905 São Carlos, São Paulo, Brazil
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Rafael Schio Wengenroth Silva
;
Rafael Schio Wengenroth Silva
b)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Software, Validation, Visualization, Writing – review & editing)
1
Physics Department, Federal University of São Carlos
, 13565-905 São Carlos, São Paulo, Brazil
b)Author to whom correspondence should be addressed: [email protected]
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Ovidiu Lipan
;
Ovidiu Lipan
c)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Software, Validation, Visualization, Writing – original draft)
2
Department of Physics, University of Richmond
, 28 Westhampton Way, Richmond, Virginia 23173, USA
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Fabian Hartmann
Fabian Hartmann
d)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Validation, Visualization, Writing – review & editing)
3Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
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b)Author to whom correspondence should be addressed: [email protected]
a)
Electronic mail: [email protected]
c)
Electronic mail: [email protected]
d)
Electronic mail: [email protected]
J. Appl. Phys. 133, 134901 (2023)
Article history
Received:
January 16 2023
Accepted:
February 21 2023
Citation
Victor Lopez-Richard, Rafael Schio Wengenroth Silva, Ovidiu Lipan, Fabian Hartmann; Tuning the conductance topology in solids. J. Appl. Phys. 7 April 2023; 133 (13): 134901. https://doi.org/10.1063/5.0142721
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