NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.
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7 January 2023
Research Article|
January 03 2023
Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers
Special Collection:
Radiation Effects in Materials
Jian-Sian Li
;
Jian-Sian Li
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Chao-Ching Chiang
;
Chao-Ching Chiang
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Xinyi Xia
;
Xinyi Xia
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Sergei Stepanoff
;
Sergei Stepanoff
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft)
2
Department of Materials Science & Engineering, Penn State University
, University Park, Pennsylvania 16802, USA
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Aman Haque
;
Aman Haque
(Conceptualization, Data curation, Formal analysis, Investigation, Writing – original draft)
3
Department of Mechanical Engineering, Penn State University
, University Park, Pennsylvania 16802, USA
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Douglas E. Wolfe;
Douglas E. Wolfe
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft)
2
Department of Materials Science & Engineering, Penn State University
, University Park, Pennsylvania 16802, USA
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Fan Ren
;
Fan Ren
(Conceptualization, Data curation, Funding acquisition, Investigation, Writing – original draft)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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S. J. Pearton
S. J. Pearton
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Methodology, Writing – original draft)
4
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32606 USA
a)Author to whom correspondence should be addressed: spear@mse.ufl.edu
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a)Author to whom correspondence should be addressed: spear@mse.ufl.edu
Note: This paper is part of the Special Topic on Radiation Effects in Materials.
J. Appl. Phys. 133, 015702 (2023)
Article history
Received:
November 22 2022
Accepted:
December 13 2022
Citation
Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, S. J. Pearton; Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers. J. Appl. Phys. 7 January 2023; 133 (1): 015702. https://doi.org/10.1063/5.0134823
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