We carried out atomic-scale observations of Mg-ion-implanted GaN by transmission electron microscopy (TEM) and atom probe tomography (APT) to clarify the crystallographic structures of extended defects and Mg agglomerations that form during post-implantation annealing. The complementary TEM and APT analyses have shown that Mg atoms agglomerate at dislocations that bound extended defects. The concentration of Mg is higher at the dislocations with a larger Burgers vector. This indicates that Mg agglomeration is caused by the pressure at the dislocations. Mg concentration in highly Mg-rich regions is 1 at. %, which exceeds the solubility limit of Mg in GaN. We investigated isothermal and isochronal evolution of the defects by TEM, cathodoluminescence analysis, and positron annihilation spectroscopy. The results indicated that the intensity of donor–acceptor pair emission increases with the annealing temperature and duration and reaches a maximum after elimination of the extended defects with highly Mg-rich regions. These results strongly suggest that such extended defects reduce the acceptor formation and that they as well as the previously reported compensating centers, such as N-related vacancies, can inhibit the formation of p-type GaN. The mechanism by which the extended defects reduce acceptor formation is discussed.
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14 August 2022
Research Article|
August 10 2022
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
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2022 Early Career Investigator Selection
Emi Kano
;
Emi Kano
a)
(Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft, Writing – review and editing)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Keita Kataoka
;
Keita Kataoka
(Data curation, Formal analysis)
2
Toyota Central R&D Labs., Inc.
, Nagakute, Aichi 480-1192, Japan
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Jun Uzuhashi
;
Jun Uzuhashi
(Data curation, Formal analysis)
3
National Institute for Materials Science
, Tsukuba 305-0047, Japan
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Kenta Chokawa
;
Kenta Chokawa
(Data curation)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
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Hideki Sakurai
;
Hideki Sakurai
b)
(Data curation)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
4
Institute of Advanced Technology, ULVAC, Inc.
, Chigasaki, Kanagawa 253-8543, Japan
b)Present address: ADDC, Toshiba Electronic Devices & Storage Corporation, Ishikawa 923-1293, Japan.
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Akira Uedono
;
Akira Uedono
(Data curation, Formal analysis)
5
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
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Tetsuo Narita
;
Tetsuo Narita
(Data curation, Validation)
2
Toyota Central R&D Labs., Inc.
, Nagakute, Aichi 480-1192, Japan
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Kacper Sierakowski;
Kacper Sierakowski
(Data curation)
6
Institute of High Pressure Physics, Polish Academy of Sciences
, Sokolowska 29/37, 01-142 Warsaw, Poland
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Michal Bockowski
;
Michal Bockowski
(Data curation)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
6
Institute of High Pressure Physics, Polish Academy of Sciences
, Sokolowska 29/37, 01-142 Warsaw, Poland
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Ritsuo Otsuki;
Ritsuo Otsuki
(Data curation)
7
Department of Electronics, Graduate School of Engineering, Nagoya University
, Aichi 464-8603, Japan
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Koki Kobayashi;
Koki Kobayashi
(Data curation)
7
Department of Electronics, Graduate School of Engineering, Nagoya University
, Aichi 464-8603, Japan
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Yuta Itoh;
Yuta Itoh
(Data curation)
7
Department of Electronics, Graduate School of Engineering, Nagoya University
, Aichi 464-8603, Japan
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Masahiro Nagao
;
Masahiro Nagao
(Validation)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
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Tadakatsu Ohkubo
;
Tadakatsu Ohkubo
(Data curation, Formal analysis, Validation)
3
National Institute for Materials Science
, Tsukuba 305-0047, Japan
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Kazuhiro Hono
;
Kazuhiro Hono
(Supervision)
3
National Institute for Materials Science
, Tsukuba 305-0047, Japan
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Jun Suda
;
Jun Suda
(Validation)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
7
Department of Electronics, Graduate School of Engineering, Nagoya University
, Aichi 464-8603, Japan
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Tetsu Kachi
;
Tetsu Kachi
(Data curation, Formal analysis)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
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Nobuyuki Ikarashi
Nobuyuki Ikarashi
(Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Supervision, Writing – original draft, Writing – review and editing)
1
Institute of Materials and Systems for Sustainability, Nagoya University
, Aichi 464-8601, Japan
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a)Author to whom correspondence should be addressed: [email protected]
b)Present address: ADDC, Toshiba Electronic Devices & Storage Corporation, Ishikawa 923-1293, Japan.
J. Appl. Phys. 132, 065703 (2022)
Article history
Received:
May 02 2022
Accepted:
July 15 2022
Citation
Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, Nobuyuki Ikarashi; Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation. J. Appl. Phys. 14 August 2022; 132 (6): 065703. https://doi.org/10.1063/5.0097866
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