High room temperature n-type mobility, exceeding 300 cm2/Vs, was demonstrated in Si-doped AlN. Dislocations and CN−1 were identified as the main compensators for AlN grown on sapphire and AlN single crystalline substrates, respectively, limiting the lower doping limit and mobility. Once the dislocation density was reduced by the growth on AlN wafers, C-related compensation could be reduced by controlling the process supersaturation and Fermi level during growth. While the growth on sapphire substrates supported only high doping ([Si] > 5 × 1018 cm−3) and low mobility (∼20 cm2/Vs), growth on AlN with proper compensation management enabled controlled doping at two orders of magnitude lower dopant concentrations. This work is of crucial technological importance because it enables the growth of drift layers for AlN-based power devices.
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14 November 2022
Research Article|
November 09 2022
High electron mobility in AlN:Si by point and extended defect management
Pegah Bagheri
;
Pegah Bagheri
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, NC 27695, USA
a)Author to whom correspondence should be addressed: [email protected]
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Cristyan Quiñones-Garcia;
Cristyan Quiñones-Garcia
(Data curation, Methodology)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, NC 27695, USA
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Dolar Khachariya
;
Dolar Khachariya
(Data curation, Investigation, Methodology)
2
Adroit Materials
, Cary, NC 27518, USA
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Shashwat Rathkanthiwar
;
Shashwat Rathkanthiwar
(Formal analysis)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, NC 27695, USA
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Pramod Reddy
;
Pramod Reddy
(Formal analysis, Investigation, Methodology, Validation, Writing – review & editing)
2
Adroit Materials
, Cary, NC 27518, USA
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Ronny Kirste
;
Ronny Kirste
(Conceptualization)
2
Adroit Materials
, Cary, NC 27518, USA
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Seiji Mita;
Seiji Mita
(Conceptualization, Data curation)
2
Adroit Materials
, Cary, NC 27518, USA
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James Tweedie;
James Tweedie
(Project administration)
2
Adroit Materials
, Cary, NC 27518, USA
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Ramón Collazo;
Ramón Collazo
(Funding acquisition, Project administration, Resources, Supervision, Validation, Writing – review & editing)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, NC 27695, USA
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Zlatko Sitar
Zlatko Sitar
(Conceptualization, Funding acquisition, Investigation, Project administration, Resources, Supervision, Writing – review & editing)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, NC 27695, USA
2
Adroit Materials
, Cary, NC 27518, USA
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 132, 185703 (2022)
Article history
Received:
September 07 2022
Accepted:
October 18 2022
Citation
Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar; High electron mobility in AlN:Si by point and extended defect management. J. Appl. Phys. 14 November 2022; 132 (18): 185703. https://doi.org/10.1063/5.0124589
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