Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.
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7 November 2022
Research Article|
November 01 2022
Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
Brandon Dzuba;
Brandon Dzuba
(Investigation, Writing – original draft)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
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Trang Nguyen;
Trang Nguyen
(Investigation)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
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Amrita Sen;
Amrita Sen
(Investigation, Writing – original draft)
3
School of Materials Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Rosa E. Diaz;
Rosa E. Diaz
(Investigation)
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
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Megha Dubey;
Megha Dubey
(Investigation)
4
Center for Advanced Energy Studies
, Idaho Falls, Idaho 83401, USA
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Mukesh Bachhav;
Mukesh Bachhav
(Investigation)
5
Idaho National Laboratory, Materials and Fuel Complex
, Scoville, Idaho 83415, USA
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Janelle P. Wharry
;
Janelle P. Wharry
(Investigation, Supervision, Writing – original draft)
3
School of Materials Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Michael J. Manfra
;
Michael J. Manfra
(Investigation, Supervision, Writing – original draft)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
3
School of Materials Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
6
School of Electrical and Computer Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Oana Malis
Oana Malis
a)
(Conceptualization, Funding acquisition, Writing – original draft)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 132, 175701 (2022)
Article history
Received:
August 17 2022
Accepted:
October 09 2022
Citation
Brandon Dzuba, Trang Nguyen, Amrita Sen, Rosa E. Diaz, Megha Dubey, Mukesh Bachhav, Janelle P. Wharry, Michael J. Manfra, Oana Malis; Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy. J. Appl. Phys. 7 November 2022; 132 (17): 175701. https://doi.org/10.1063/5.0118075
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