The reduction of the photogenerated charge carriers' influence in periodically illuminated thin silicon membranes is investigated by using the experimental setup of an open photoacoustic cell in the standard range of modulation frequencies from 20 Hz to 20 kHz. It is confirmed that the deposition of a 200 nm thin film of titanium dioxide on the 30- and 50 μm silicon membrane leads to a large increase of the thermoelastic component of the photoacoustic signal, which restores the flexibility lost to the membrane under the influence of photogenerated carriers. The effect of the thermoelastic component enhancement is analyzed by observing the displacement of the tested samples along the heat propagation axis, depending on the carrier density and temperature differences on the illuminated and unilluminated sides, for different membrane thicknesses and a constant film thickness. It is found that the effect of enhancement of several orders of magnitude is more visible in thinner membranes due to higher ratios between the film and membrane thicknesses.
REFERENCES
1.
M.
Kaviany
, Heat Transfer Physics
, 2nd ed. (Cambridge University Press
, Cambridge
, 2014
), ISBN 978-1-107041783.2.
3.
I.
Lashkevych
, O.
Titov
, and Y. G.
Gurevich
, “Recombination and temperature distribution in semiconductors
,” Semicond. Sci. Technol.
27
, 055014
(2012
). 4.
S.
Volz
, Microscale and Nanoscale Heat Transfer (Topics in Applied Physics)
(Springer
, 2010
), ISBN 978-3642071584.5.
S. S.
Li
, “Excess carrier phenomenon in semiconductors
,” in Semiconductor Physical Electronics
, edited by S. S.
Li
(Springer
, New York
, 2006
).6.
S. E.
Bialkowski
, N. G. C.
Astrath
, and M. A.
Proskurnin
, “Photothermal spectroscopy methods
,” in Chemical Analysis: A Series of Monographs on Analytical Chemistry and Its Applications
(John Wiley & Sons
, New York
, 2019
), ISBN: 9781119279075.7.
M.
Pawlak
, “Photothermal, photocarrier, and photoluminescence phenomena in semiconductors studied using spectrally resolved modulated infrared radiometry: Physics and applications
,” J. Appl. Phys.
126
, 150902
(2019
). 8.
D.
Foumier
, A. C.
Boccara
, A.
Skumanish
, and N. M.
Amer
, “Photothermal investigation of transport in semiconductors: Theory and experiment
,” J. Appl. Phys.
59
, 787
(1986
). 9.
Y. G.
Gurevich
and I.
Lashkevych
, “Sources of fluxes of energy, heat, and diffusion heat in a bipolar semiconductor: Influence of nonequilibrium charge carriers
,” Int. J. Thermophys.
34
, 341
(2013
). 10.
Y. G.
Gurevich
and J. E.
Velázquez-Pérez
, “The role of non-equilibrium charge carriers in thermoelectric cooling
,” J. Appl. Phys.
114
, 033704
(2013
). 11.
Photoacoustic and Thermal Wave Phenomena in Semiconductors
, edited by A.
Mandelis
(Elsevier
, New York
, 1987
).12.
Semiconductors and Electronic Materials
, in Progress in Photothermal and Photoacoustic Science and Technology
, edited by A.
Mandelis
and P.
Hess
(SPIE Press
, Washington
, 2000
).13.
D. K.
Markushev
, D. D.
Markushev
, S. M.
Aleksić
, D. S.
Pantić
, S. P.
Galović
, D. M.
Todorović
, and J.
Ordonez-Miranda
, “Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon
,” J. Appl. Phys.
128
, 095103
(2020
). 14.
D. K.
Markushev
, D. D.
Markushev
, S. M.
Aleksić
, D. S.
Pantić
, S. P.
Galović
, D. M.
Todorović
, and J.
Ordonez-Miranda
, “Effects of the photogenerated excess carriers on the thermal and elastic properties of n-type silicon excited with a modulated light source: Theoretical analysis
,” J. Appl. Phys.
126
, 185102
(2019
). 15.
D. K.
Markushev
, D. D.
Markushev
, S. P.
Galovic
, S. M.
Aleksic
, D. S.
Pantic
, and D. M.
Todorovic
, “The surface recombination velocity and bulk lifetime influences on photogenerated carrier density and temperature distributions in n-type silicon excited by a frequency-modulated light source
,” FU Ser. Elec. Energ.
31
(2
), 313
–328
(2018
). 16.
D. M.
Todorović
, M. D.
Rabasović
, D. D.
Markushev
, and M.
Sarajlić
, “Photoacoustic elastic bending in thin film–substrate system: Experimental determination of the thin film parameters
,” J. Appl. Phys.
116
, 053506
(2014
). 17.
D. M.
Todorović
, M. D.
Rabasović
, and D. D.
Markushev
, “Photoacoustic elastic bending in thin film–substrate system
,” J. Appl. Phys.
114
, 213510
(2013
). 18.
F. A.
McDonald
and G. C.
Wetsel
, Jr, “Theory of photothermal and photoacoustic effects in condensed matter
,” in Physical Acoustics
(Academic Press
, 1988
), Vol. 18, Chap. 4, pp. 167
–277
. 19.
A.
Rosencwaig
, “Thermal wave characterization and inspection of semiconductor materials and devices
,” in Photoacoustic and Thermal Wave Phenomena in Semiconductors
, edited by A.
Mandelis
(Elsevier Publishing Company
, 1987
), pp. 97
–135
.20.
N.
Jovančić
, D. K.
Markushev
, D. D.
Markushev
, S. M.
Aleksić
, D. S.
Pantić
, D.
Korte
, and M.
Franko
, “Thermal and elastic characterization of nanostructured Fe2O3 polymorphs and TiO2-coated Fe2O3 using open photoacoustic cell
,” Int. J. Thermophys.
41
, 90
(2020
). 21.
D. D.
Markushev
, M. D.
Rabasović
, D. M.
Todorović
, S.
Galović
, and S. E.
Bialkowski
, “Photoacoustic signal and noise analysis for Si thin plate: Signal correction in frequency domain
,” Rev. Sci. Instrum.
86
, 035110
(2015
). 22.
M. H.
Shinen
, S. A. A.
AlSaati
, and F. Z.
Razooqi
, “Preparation of high transmittance TiO2 thin films by sol-gel technique as antireflection coating
,” J. Phys. Conf. Ser.
1032
, 012018
(2018
). 23.
A.
Kot
, M.
Radecka
, D.
Dorosz
, and K.
Zakrzewska
, “Optically active TiO2:Er thin films deposited by magnetron sputtering
,” Materials
14
, 4085
(2021
). 24.
I.
Sta
, M.
Jlassi
, M.
Hajji
, M. F.
Boujmil
, R.
Jerbi
, M.
Kandyla
, M.
Kompitsas
, and H.
Ezzaouia
, “Structural and optical properties of TiO2 thin films prepared by spin coating
,” J. Sol-Gel Sci. Technol.
72
, 421
–427
(2014
). 25.
See https://www.azom.com/properties.aspx?ArticleID=1179 for information about the thermoelastic properties of TiO2.
© 2022 Author(s). Published under an exclusive license by AIP Publishing.
2022
Author(s)
You do not currently have access to this content.