The domain switching dynamics in a relaxor ferroelectric lanthanum-modified lead zirconate titanate thin film with 12 mol. % La was investigated by time-resolved x-ray diffraction. While most frequently epitaxial thin films are investigated, the present work reports results on a polycrystalline thin film. Asymmetric butterfly loops of the strain as a function of the applied electric field evidenced a built-in electric field oriented toward the thin film–substrate interface. The piezoelectric coefficient d33 (in the film reference frame) diminishes with the increasing frequency of an applied AC electric field. From the strain transient during the application of positive-up negative-down voltage pulse sequences with frequencies of up to 100 kHz, characteristic times of the order of 100–200 ns were determined for these relaxor ferroelectric thin films. While switching times ranging from the picosecond to the millisecond range are reported in the literature for different materials, these characteristic switching times are comparable to epitaxial lead zirconate titanate thin films of various compositions despite the polycrystallinity of the present thin film. However, the evidenced built-in electric field significantly influences the switching behavior for different polarities.
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14 February 2022
Research Article|
February 14 2022
Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films
Matthias Rössle
;
Matthias Rössle
1
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Wilhelm-Conrad Röntgen Campus, BESSY II
, Albert-Einstein-Straße 15, 12489 Berlin, Germany
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Olivier Thomas
;
Olivier Thomas
2
Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334
, Marseille, France
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Cristian Mocuta
;
Cristian Mocuta
3
Synchrotron SOLEIL, L’Orme des Merisiers
, Saint-Aubin—BP 48, 91192 Gif-sur-Yvette Cedex, France
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Raphael Rousset
;
Raphael Rousset
2
Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334
, Marseille, France
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Michael Texier;
Michael Texier
2
Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334
, Marseille, France
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Stéphanie Escoubas
;
Stéphanie Escoubas
2
Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334
, Marseille, France
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Catherine Dubourdieu;
Catherine Dubourdieu
4
Institute Functional Oxides for Energy-Efficient Information Technology, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
5
Freie Universität Berlin, Physical Chemistry
, Arnimallee 22, 14195 Berlin, Germany
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Eudes B. Araújo
;
Eudes B. Araújo
6
Department of Physics and Chemistry, School of Natural Sciences and Engineering, São Paulo State University (UNESP)
, 15385-000, Ilha Solteira, SP, Brazil
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Thomas W. Cornelius
Thomas W. Cornelius
a)
2
Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334
, Marseille, France
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 131, 064102 (2022)
Article history
Received:
November 06 2021
Accepted:
January 26 2022
Citation
Matthias Rössle, Olivier Thomas, Cristian Mocuta, Raphael Rousset, Michael Texier, Stéphanie Escoubas, Catherine Dubourdieu, Eudes B. Araújo, Thomas W. Cornelius; Time-resolved piezoelectric response in relaxor ferroelectric (Pb0.88La0.12)(Zr0.52Ti0.48)O3 thin films. J. Appl. Phys. 14 February 2022; 131 (6): 064102. https://doi.org/10.1063/5.0077785
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