Accurate description of solubility and defect ionization energies in low dimensional nanostructures is critical for electronic applications of semiconductors with improved functionalities. Here, we present quantum confinement effect driven strategies for tuning defect level of hydrogen doping in the core region of rutile (R) nanowires. The inverse dependence of a bandgap with a diameter () confirms the presence of quantum confinement effect in nanowires. The hydrogen doping in both interstitial and substitution at the O site behaves as a deep donor in low diameter nanowires, where the effect of quantum confinement is significant. The position of a donor charge transition level becomes increasingly shallower with increased nanowire diameters. The ionization energies of hydrogen defects decrease for larger-diameter nanowires due to the dielectric screening effect increment. This indicates the possibility of achieving n-type dopability with large diameter (R) nanowires. This study prescribes the strategies for optimizing doping and the defect level for extensive applications of highly correlated 1D nanostructured materials.
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21 June 2022
Research Article|
June 17 2022
Quantum confinement effect on defect level of hydrogen doped rutile VO2 nanowires
Special Collection:
2D Piezoelectrics, Pyroelectrics, and Ferroelectrics
Manoj Dey
;
Manoj Dey
(Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
Materials Research Centre, Indian Institute of Science
, Bangalore 560012, India
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Suman Chowdhury
;
Suman Chowdhury
(Data curation, Formal analysis)
Materials Research Centre, Indian Institute of Science
, Bangalore 560012, India
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Sonu Kumar
;
Sonu Kumar
(Data curation, Formal analysis, Investigation)
Materials Research Centre, Indian Institute of Science
, Bangalore 560012, India
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Abhishek Kumar Singh
Abhishek Kumar Singh
a)
(Conceptualization, Supervision, Writing – original draft, Writing – review & editing)
Materials Research Centre, Indian Institute of Science
, Bangalore 560012, India
a)Author to whom correspondence should be addressed: abhishek@iisc.ac.in
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a)Author to whom correspondence should be addressed: abhishek@iisc.ac.in
Note: This paper is part of the Special Topic on 2D Piezoelectrics, Pyroelectrics, and Ferroelectrics.
J. Appl. Phys. 131, 235702 (2022)
Article history
Received:
April 13 2022
Accepted:
June 01 2022
Citation
Manoj Dey, Suman Chowdhury, Sonu Kumar, Abhishek Kumar Singh; Quantum confinement effect on defect level of hydrogen doped rutile VO2 nanowires. J. Appl. Phys. 21 June 2022; 131 (23): 235702. https://doi.org/10.1063/5.0095834
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